Electronic Devices

Lower

Higher

Equal

Zero

Very high

Very low

Zero

Same as metals

Aluminum

Indium

Boron

Phosphorus

Inside the conduction band

Inside the valence band

Midway between conduction and valence bands

At the donor level

It has one extra electron compared to Silicon

It has one less valence electron than Silicon

It has the same number of electrons as Silicon

It is larger than the Silicon atom

Partially filled

Completely filled

Completely empty

Overlapping with the conduction band

Change in atomic weight

Change in the crystal structure and band overlap

Addition of impurities

Change in the number of protons

The conduction band edge $E_c$

The donor level $E_d$

The intrinsic Fermi level $E_{Fi}$

The valence band edge $E_v$

The range of energies an electron is forbidden to have

The range of energies allowed for electrons due to the overlap of atomic orbitals

The discrete energy levels of a single atom

The kinetic energy of the nuclei

Bose-Einstein Statistics

Maxwell-Boltzmann Statistics

Fermi-Dirac Statistics

Gibbs Statistics

Negative terminal of the battery

Positive terminal of the battery

The ground

The n-side directly

$40.6\%$

$75.0\%$

$81.2\%$

$95.5\%$

Full-wave rectifier

Half-wave rectifier

Short circuit

Voltage regulator

Movement due to concentration gradient

Movement due to applied electric field

Movement due to gravity

Movement due to thermal agitation only

A steady DC voltage

An AC voltage with zero average value

A pulsating DC voltage

A sinusoidal wave with half the frequency

Only the temperature

Only the doping concentration

Both temperature and doping concentration

The length and area of the sample

High resistance in forward bias

Low resistance in reverse bias

Unidirectional current flow

Capacity to store charge in the depletion layer

$40.6\%$

$50.0\%$

$81.2\%$

$100\%$

$f/2$

$f$

$2f$

$4f$

$6.37\text{ V}$

$3.18\text{ V}$

$7.07\text{ V}$

$5.00\text{ V}$

Minimum voltage it can handle

Maximum power it can dissipate without damage

Current it produces when light hits it

Voltage at which it emits light

First quadrant

Second quadrant

Third quadrant

Origin

Forward bias

Reverse bias

Zero bias

Breakdown region

Only Red light

Only Yellow light

Red or Yellow light

Blue light only

To increase the brightness of the LED.

To limit the forward current to a safe value.

To change the color of the emitted light.

To provide the necessary reverse bias.

Increases

Decreases

Stays constant

Increases then decreases

To prevent the diode from overheating.

To protect the diode from mechanical shock only.

To increase the angle of total internal reflection and allow more light to escape.

To act as a filter for unwanted frequencies.

Change in output voltage for a given change in input voltage.

Change in output voltage for a given change in load current.

Change in Zener current for a change in temperature.

The ratio of series resistance to load resistance.

Doubles as well.

Decreases by half.

Remains almost unchanged.

Becomes zero.

$110 \Omega$

$140 \Omega$

$180 \Omega$

$250 \Omega$

Resistor

Logic Gate

Capacitor

Inductor

A

0

1

$\overline{A}$

1

0

A

$\overline{A}$

$A^2$

$A+A$

$\overline{A}$

$A \cdot A$

Inverted AND

Inverted OR

Exclusive OR

Complementary NOR

$A + 0 = A$

$A + A = A$

$A \cdot 1 = A$

$A + \bar{A} = 1$

1

2

3

4

$(0, 0, 0)$

$(1, 1, 1)$

$(0, 1, 0)$

Any combination with at least one 0

$A$

$A + B$

$A \cdot B$

$A + B \cdot C$

$A + \overline{B}$

$\overline{\overline{A} \cdot B}$

$A \cdot B + \overline{A} \cdot \overline{B}$

$A \oplus B$